All publications are linked to their owner's pages to retain their original copyright.
|
Year |
Title |
Where Published |
| 2014 | Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001) | AIP |
| 2014 | Benefit of Combining Metrology Techniques for Thin SiGe Layers | ASMC |
| 2014 | Measurement of periodicity and strain in arrays of single crystal silicon and pseudomorphic Si1−xGex/Si fin structures using x-ray reciprocal space maps | AIP |
| 2012 | Prediction of the propagation probability of individual cracks in brittle single crystal materials | AIP |
| 2011 | Metrology of epitaxial thin-films by advanced HRXRD and XRR |
Electro IQ |
| 2011 | A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology |
FCMN2011 |
| 2010 | Production metrology of advanced LED structures using high-resolution X-ray diffraction |
Solid State Technology |
| 2008 | Mosaicity and stress effects on luminescence properties of GaN |
Physica Status Solidi (a) |
| 2007 | Effect of thickness on structural and electrical properties of GaN films Grown on SiN-treated sapphire |
Journal of Crystal Growth |
| 2007 | Asymmetric Relaxation of SiGe in Patterned Si Line Structures |
AIP Conf. Proc. |
| 2007 | In-line characterization of HBT base layers by high-resolution X-ray diffraction |
ECS Trans. |
| 2007 | X-ray metrology tool for new device materials and structures |
Fabtech Semiconductor |
| 2007 | Ultra Low-κ Metrology Using X-Ray Reflectivity And Small-Angle X-Ray Scattering Techniques |
AIP Conf. Proc. |
| 2007 | Under-bump Metallization (UBM) Control using X-ray Fluorescence (XRF) |
AIP Conf. Proc. |
| 2007 | CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) using X-ray Reflectivity |
AIP Conf. Proc. |
| 2007 | Characterization of Surface Preparation for Epitaxial SiGe Process using X-ray Reflectivity |
ECS Trans. |
| 2006 | Application of x-ray metrology in the characterization of metal gate thin films |
J. Vac. Sci. Technol. B |
| 2006 | Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility |
J. Appl. Phys. |
|
2006 |
Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels |
ECS Trans. |
| 2005 | Combined XRR and RS Measurements of Nickel Silicide Films |
AIP Conf. Proc. |
| 2005 | Accuracy and Repeatability of X-Ray Metrology |
AIP Conf. Proc. |
| 2005 | Scans along arbitrary directions in Reciprocal space and the analysis of GaN films on SiC |
Journal of Physics D |
| 2005 | MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells |
MRS |
| 2005 | Annealing effects on the temperature dependence of photoluminescence Characteristics of GaAsSbN single-quantum wells |
J. Appl. Phys. |
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